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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF7240TR UMW electronic component

IRF7240TR

MOSFET P-CH 40V 10.5A 8SOIC

UMW

3,000
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SQ3419AEEV-T1_BE3 Vishay Siliconix electronic component

SQ3419AEEV-T1_BE3

P-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix

2,897
RFQ

Datasheet

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 6.9A (Tc) 4.5V, 10V 61mOhm @ 2.5A, 10V 2.5V @ 250µA 12.5 nC @ 4.5 V ±12V 975 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
IRF6713STRPBF International Rectifier electronic component

IRF6713STRPBF

MOSFET N-CH 25V 22A/95A DIRECTFT

International Rectifier

2,745
RFQ

Datasheet

DirectFET™ DirectFET™ Isometric SQ Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 22A (Ta), 95A (Tc) - 3mOhm @ 22A, 10V 2.4V @ 50µA 32 nC @ 4.5 V ±20V 2880 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric SQ
SQ3426AEEV-T1_BE3 Vishay Siliconix electronic component

SQ3426AEEV-T1_BE3

MOSFET N-CH 60V 7A 6TSOP

Vishay Siliconix

2,729
RFQ

Datasheet

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 1100 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
AUIRL2203N International Rectifier electronic component

AUIRL2203N

AUTOMOTIVE N-CHANNEL

International Rectifier

2,521
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
GT180N12K Goford Semiconductor electronic component

GT180N12K

MOSFET N-CH 120V 70A 100W 10M(M

Goford Semiconductor

2,500
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 17mOhm @ 20A, 10V 4.5V @ 250µA 25 nC @ 10 V ±20V 1650 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
IRLR9343TR UMW electronic component

IRLR9343TR

MOSFET P-CH 55V 20A DPAK

UMW

2,500
RFQ

Datasheet

* TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA - ±20V - - 79W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount TO-252 (DPAK)
RFG45N06 Harris Corporation electronic component

RFG45N06

N-CHANNEL POWER MOSFET

Harris Corporation

2,175
RFQ

Datasheet

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 28mOhm @ 45A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2050 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
G45P40T Goford Semiconductor electronic component

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor

2,055
RFQ

Datasheet

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 3269 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
30N06 UMW electronic component

30N06

60V 25A 30MR@10V,15A 34.7W 2.5V@

UMW

1,920
RFQ

Datasheet

UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 29mOhm @ 15A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1562 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
SQ3426AEEV-T1_GE3 Vishay Siliconix electronic component

SQ3426AEEV-T1_GE3

MOSFET N-CH 60V 7A 6TSOP

Vishay Siliconix

1,724
RFQ

Datasheet

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 700 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
AMIF100S201 Analog Power Inc. electronic component

AMIF100S201

MOSFET N-CH 100V 200A TO-263

Analog Power Inc.

1,700
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 4mOhm @ 45A, 10V 1V @ 250µA 66 nC @ 4.5 V ±20V 5720 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
NDB4060L Fairchild Semiconductor electronic component

NDB4060L

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor

1,600
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 5V, 10V 80mOhm @ 15A, 10V 2V @ 250µA 17 nC @ 5 V ±16V 600 pF @ 25 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFB7440PBF UMW electronic component

IRFB7440PBF

MOSFET N-CH 40V 120A TO220AB

UMW

900
RFQ

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
RFP50N06 Harris Corporation electronic component

RFP50N06

MOSFET N-CH 60V 50A TO220-3

Harris Corporation

665
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
HUF75343S3 Harris Corporation electronic component

HUF75343S3

75 A, 55 V, 0.009 OHM, N-CHANNEL

Harris Corporation

557
RFQ

Datasheet

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
HUF75343S3 Fairchild Semiconductor electronic component

HUF75343S3

MOSFET N-CH 55V 75A I2PAK

Fairchild Semiconductor

540
RFQ

Datasheet

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
IRF5305PBF UMW electronic component

IRF5305PBF

MOSFET P-CH 55V 31A TO220AB

UMW

489
RFQ

Datasheet

* - Tube Active - - - - - - - - - - - - - - - - -
PSMN7R8-120ESQ NXP USA Inc. electronic component

PSMN7R8-120ESQ

POWER FIELD-EFFECT TRANSISTOR, 7

NXP USA Inc.

430
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
TPIC2322LD Texas Instruments electronic component

TPIC2322LD

SMALL SIGNAL N-CHANNEL MOSFET

Texas Instruments

330
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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