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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2SK4198FS onsemi electronic component

2SK4198FS

MOSFET N-CH 600V 4A TO220-3

onsemi

5,627
RFQ

-

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.34Ohm @ 2.5A, 10V - 14.3 nC @ 10 V ±30V 360 pF @ 30 V - 2W (Ta), 30W (Tc) 150°C (TJ) - - Through Hole TO-220-3
FDPF5N50UTYDTU Fairchild Semiconductor electronic component

FDPF5N50UTYDTU

TRANS MOSFET N-CH 500V 4A T/R

Fairchild Semiconductor

49,600
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFD113 Harris Corporation electronic component

IRFD113

MOSFET N-CH 60V 800MA 4DIP

Harris Corporation

46,955
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-HVMDIP
SPU02N60S5BKMA1 Infineon Technologies electronic component

SPU02N60S5BKMA1

MOSFET N-CH 600V 1.8A TO251-3

Infineon Technologies

4,611
RFQ

Datasheet

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 5.5V @ 80µA 9.5 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
IPB35N12S3L26ATMA1 Infineon Technologies electronic component

IPB35N12S3L26ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

4,173
RFQ

Datasheet

OptiMOS™ T TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 35A (Tc) 4.5V, 10V 26.3mOhm @ 35A, 10V 2.4V @ 39µA 30 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPP60R520C6XKSA1 Infineon Technologies electronic component

IPP60R520C6XKSA1

MOSFET N-CH 600V 8.1A TO220-3

Infineon Technologies

5,034
RFQ

Datasheet

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IRFW540ATM Fairchild Semiconductor electronic component

IRFW540ATM

MOSFET N-CH 100V 28A D2PAK

Fairchild Semiconductor

16,268
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 52mOhm @ 14A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1710 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
AO6404 Alpha & Omega Semiconductor Inc. electronic component

AO6404

MOSFET N-CH 20V 8.6A 6TSOP

Alpha & Omega Semiconductor Inc.

14,345
RFQ

Datasheet

- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 8.6A (Ta) 1.8V, 10V 17mOhm @ 8.5A, 10V 1V @ 250µA 17.9 nC @ 4.5 V ±12V 1810 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
2SJ654 onsemi electronic component

2SJ654

P-CHANNL SILICON MOSFET

onsemi

14,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
PSMN8R5-100ESFQ Nexperia USA Inc. electronic component

PSMN8R5-100ESFQ

MOSFET N-CHANNEL 100V 97A I2PAK

Nexperia USA Inc.

2,651
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 7V, 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 44.5 nC @ 10 V ±20V 3181 pF @ 50 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK
SI1013X-T1-GE3 Vishay Siliconix electronic component

SI1013X-T1-GE3

MOSFET P-CH 20V 350MA SC89-3

Vishay Siliconix

7,574
RFQ

Datasheet

TrenchFET® SC-89, SOT-490 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5 nC @ 4.5 V ±6V - - 250mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-89-3
RF1S25N06SM9A Harris Corporation electronic component

RF1S25N06SM9A

N-CHANNEL POWER MOSFET

Harris Corporation

4,000
RFQ

Datasheet

- - Bulk Active - - - - - - - - - - - - - - - - -
SI1302DL-T1-BE3 Vishay Siliconix electronic component

SI1302DL-T1-BE3

MOSFET N-CH 30V 600MA SC70-3

Vishay Siliconix

3,003
RFQ

Datasheet

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) - 480mOhm @ 600mA, 10V 3V @ 250µA 1.4 nC @ 10 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-3
NTMS4916NR2G UMW electronic component

NTMS4916NR2G

MOSFET N-CH 30V 7.8A 8SOIC

UMW

3,000
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDS8878 UMW electronic component

FDS8878

MOSFET N-CH 30V 10.2A 8SOIC

UMW

3,000
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
G2014 Goford Semiconductor electronic component

G2014

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

Goford Semiconductor

2,940
RFQ

Datasheet

TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Tc) 2.5V, 10V 7mOhm @ 5A, 10V 900mV @ 250µA 17.5 nC @ 4.5 V ±12V 1710 pF @ 10 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
IRLML6401 UMW electronic component

IRLML6401

12V 4.3A 50MR@4.5V,4.3A 1.3W 950

UMW

2,807
RFQ

Datasheet

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 12 V 4.3A (Ta) 1.8V, 4.5V 50mOhm @ 4.3A, 4.5V 950mV @ 250µA 15 nC @ 5 V ±8V 830 pF @ 10 V - 1.3W (Ta) 150°C (TJ) - - Surface Mount SOT-23
RSE002P03TL Rohm Semiconductor electronic component

RSE002P03TL

MOSFET P-CH 30V 200MA EMT3

Rohm Semiconductor

2,734
RFQ

-

- SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 4V, 10V 1.4Ohm @ 200mA, 10V 2.5V @ 1mA - ±20V 30 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount EMT3
FDD6690S Fairchild Semiconductor electronic component

FDD6690S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,500
RFQ

Datasheet

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 10V 16mOhm @ 10A, 10V 3V @ 1mA 24 nC @ 10 V ±20V 2010 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FDD8780 UMW electronic component

FDD8780

MOSFET N-CH 25V 35A DPAK

UMW

2,500
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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FETs, MOSFETs Electronic Components

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