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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GSFD2506 Good-Ark Semiconductor electronic component

GSFD2506

MOSFET, N-CH, SINGLE, 6.00A, 250

Good-Ark Semiconductor

4,972
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 4.5V, 10V 620mOhm @ 2A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 777 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF5N50CYDTU onsemi electronic component

FQPF5N50CYDTU

MOSFET N-CH 500V 5A TO220F-3

onsemi

9,269
RFQ

Datasheet

QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
2SJ317NYTR Renesas Electronics Corporation electronic component

2SJ317NYTR

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

4,000
RFQ

Datasheet

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
RFD14N06 Harris Corporation electronic component

RFD14N06

N-CHANNEL POWER MOSFET

Harris Corporation

3,664
RFQ

Datasheet

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
AUIRLL024NTR-IR International Rectifier electronic component

AUIRLL024NTR-IR

AUTOMOTIVE POWER MOSFET

International Rectifier

3,529
RFQ

Datasheet

HEXFET® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) 4V, 10V 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
IPP45P03P4L11AKSA1 Infineon Technologies electronic component

IPP45P03P4L11AKSA1

MOSFET P-CH 30V 45A TO220-3

Infineon Technologies

9,618
RFQ

Datasheet

OptiMOS™ TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 11.1mOhm @ 45A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRF7241TR UMW electronic component

IRF7241TR

MOSFET P-CH 40V 6.2A 8SOIC

UMW

3,000
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDD5810 UMW electronic component

FDD5810

MOSFET N-CH 60V 7.4A/37A DPAK

UMW

2,500
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V 2V @ 50µA 34 nC @ 10 V ±20V 1890 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IPD50N06S2-14 UMW electronic component

IPD50N06S2-14

MOSFET N-CH 60V 50A DPAK

UMW

2,500
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDD8874 UMW electronic component

FDD8874

MOSFET N-CH 30V 116A DPAK

UMW

2,500
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
HUF76609D3 UMW electronic component

HUF76609D3

MOSFET N-CH 100V 10A DPAK

UMW

2,500
RFQ

Datasheet

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
G2N65K Goford Semiconductor electronic component

G2N65K

MOSFET N-CH 650V 2A 35W TO-252

Goford Semiconductor

2,455
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 5Ohm @ 1A, 10V 3.2V @ 250µA 8 nC @ 10 V ±20V 250 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
RM40P40LD Rectron USA electronic component

RM40P40LD

MOSFET P-CHANNEL 40V 40A TO252-2

Rectron USA

2,432
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 10V 14mOhm @ 12A, 10V 3V @ 250µA - ±20V 2960 pF @ 20 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-2
100N03A UMW electronic component

100N03A

TO-252 MOSFETS ROHS

UMW

2,335
RFQ

Datasheet

UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HUFA76439P3 Fairchild Semiconductor electronic component

HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

1,551
RFQ

Datasheet

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
HUF75333S3 Harris Corporation electronic component

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation

1,257
RFQ

Datasheet

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
HUF75333S3 Fairchild Semiconductor electronic component

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

Fairchild Semiconductor

1,160
RFQ

Datasheet

UltraFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
IRF3709PBF Infineon Technologies electronic component

IRF3709PBF

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies

2,281
RFQ

Datasheet

HEXFET® TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD9113 Harris Corporation electronic component

IRFD9113

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Harris Corporation

1,090
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-DIP, Hexdip, HVMDIP
IPP042N03LGXKSA1 Infineon Technologies electronic component

IPP042N03LGXKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies

4,551
RFQ

Datasheet

OptiMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
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FETs, MOSFETs Electronic Components

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