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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
HUF76409D3ST Fairchild Semiconductor electronic component

HUF76409D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26,462
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FDD6780A Fairchild Semiconductor electronic component

FDD6780A

16.4A, 25V, 0.0086OHM, N-CHANNEL

Fairchild Semiconductor

26,410
RFQ

Datasheet

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 16.4A (Ta), 30A (Tc) 4.5V, 10V 8.6mOhm @ 16.4A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1235 pF @ 13 V - 3.7W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FDS9400A Fairchild Semiconductor electronic component

FDS9400A

MOSFET P-CH 30V 3.4A 8SOIC

Fairchild Semiconductor

26,104
RFQ

Datasheet

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3.4A (Ta) 4.5V, 10V 130mOhm @ 1A, 10V 3V @ 250µA 3.5 nC @ 5 V ±25V 205 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
BSC882N03MSG Infineon Technologies electronic component

BSC882N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies

23,996
RFQ

Datasheet

OptiMOS™ 3 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 34 V 22A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8
N0600N-S17-AY Renesas Electronics Corporation electronic component

N0600N-S17-AY

MOSFET N-CH 60V 30A TO220

Renesas Electronics Corporation

22,000
RFQ

Datasheet

- TO-220-3 Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) - 36mOhm @ 15A, 4.5V - 29.8 nC @ 10 V - 1380 pF @ 10 V - 2W (Ta), 20W (Tc) 150°C (TJ) - - Through Hole TO-220
BFL4036-S onsemi electronic component

BFL4036-S

NCH 10V DRIVE SERIES

onsemi

13,590
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
NTTFS4800NTAG onsemi electronic component

NTTFS4800NTAG

MOSFET N-CH 30V 5A/32A 8WDFN

onsemi

7,854
RFQ

Datasheet

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta), 32A (Tc) 4.5V, 11.5V 20mOhm @ 20A, 10V 3V @ 250µA 16.6 nC @ 10 V ±20V 964 pF @ 15 V - 860mW (Ta), 33.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
IRFD1Z3 Harris Corporation electronic component

IRFD1Z3

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation

12,328
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Tc) 10V 3.2Ohm @ 250mA, 10V 4V @ 250µA 3 nC @ 10 V ±20V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
IRLML2402TRPBF Infineon Technologies electronic component

IRLML2402TRPBF

MOSFET N-CH 20V 1.2A SOT23

Infineon Technologies

11,869
RFQ

Datasheet

HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
2SJ633-TL-E onsemi electronic component

2SJ633-TL-E

PCH 4V DRIVE SERIES

onsemi

10,008
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
GSFP6016 Good-Ark Semiconductor electronic component

GSFP6016

MOSFET, N-CH, SINGLE, 50.00A, 60

Good-Ark Semiconductor

9,990
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 2.9V @ 250µA 48 nC @ 10 V ±20V 2200 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (4.9x5.8)
NDF08N60ZH onsemi electronic component

NDF08N60ZH

MOSFET N-CH 600V 8.4A TO220FP

onsemi

4,485
RFQ

-

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 950mOhm @ 3.5A, 10V 4.5V @ 100µA 58 nC @ 10 V ±30V 1370 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
FW905-TL-E Sanyo electronic component

FW905-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

8,000
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4C56NT1G onsemi electronic component

NTMFS4C56NT1G

MOSFET N-CH 30V 69A 5DFN

onsemi

7,500
RFQ

-

- 8-PowerTDFN, 5 Leads Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDB8876 Fairchild Semiconductor electronic component

FDB8876

MOSFET N-CH 30V 71A TO263AB

Fairchild Semiconductor

7,486
RFQ

Datasheet

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 8.5mOhm @ 40A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1700 pF @ 15 V - 70W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
2SK1274-T-AZ Renesas Electronics Corporation electronic component

2SK1274-T-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

7,086
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
FDPF5N50UT onsemi electronic component

FDPF5N50UT

MOSFET N-CH 500V 4A TO220F

onsemi

4,864
RFQ

Datasheet

FRFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
BUK9506-40B,127 NXP USA Inc. electronic component

BUK9506-40B,127

MOSFET N-CH 40V 75A TO220AB

NXP USA Inc.

5,318
RFQ

-

* - Tube Active - - - - - - - - - - - - - - - - -
AUIRFR120Z International Rectifier electronic component

AUIRFR120Z

PFET, 8.7A I(D), 100V, 0.19OHM,

International Rectifier

4,974
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
GSFD6016 Good-Ark Semiconductor electronic component

GSFD6016

MOSFET, N-CH, SINGLE, 60.00A, 60

Good-Ark Semiconductor

4,540
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 13mOhm @ 30A, 10V 2.4V @ 250µA 52 nC @ 10 V ±20V 2460 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
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FETs, MOSFETs Electronic Components

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