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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
NDH832P Fairchild Semiconductor electronic component

NDH832P

MOSFET P-CH 20V 4.2A SUPERSOT8

Fairchild Semiconductor

73,243
RFQ

Datasheet

- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.7V, 4.5V 60mOhm @ 4.2A, 4.5V 1V @ 250µA 30 nC @ 4.5 V -8V 1000 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
2SK3617-TL-E onsemi electronic component

2SK3617-TL-E

NCH 4V DRIVE SERIES

onsemi

71,400
RFQ

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFW740BTM Fairchild Semiconductor electronic component

IRFW740BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

70,400
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 540mOhm @ 5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
PHD71NQ03LT,118 NXP USA Inc. electronic component

PHD71NQ03LT,118

TRANSISTOR >30MHZ

NXP USA Inc.

64,782
RFQ

Datasheet

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 13.2 nC @ 5 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
ATP201-V-TL-H onsemi electronic component

ATP201-V-TL-H

MOSFET N-CH 30V 35A ATPAK

onsemi

2,420
RFQ

-

- ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete - - - 35A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount ATPAK
NDF04N60ZG onsemi electronic component

NDF04N60ZG

MOSFET N-CH 600V 4.8A TO220FP

onsemi

4,050
RFQ

Datasheet

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.8A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
NTD4904N-35G onsemi electronic component

NTD4904N-35G

MOSFET N-CH 30V 13A/79A IPAK

onsemi

2,992
RFQ

Datasheet

- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 79A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2.2V @ 250µA 41 nC @ 10 V ±20V 3052 pF @ 15 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4970N-35G onsemi electronic component

NTD4970N-35G

MOSFET N-CH 30V 8.5A/36A IPAK

onsemi

8,810
RFQ

Datasheet

- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta), 36A (Tc) 4.5V, 10V 11mOhm @ 30A, 10V 2.5V @ 250µA 8.2 nC @ 4.5 V ±20V 774 pF @ 15 V - 1.38W (Ta), 24.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
HUFA75309T3ST Fairchild Semiconductor electronic component

HUFA75309T3ST

MOSFET N-CH 55V 3A SOT223-4

Fairchild Semiconductor

34,459
RFQ

Datasheet

UltraFET™ TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3A (Ta) 10V 70mOhm @ 3A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 352 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
ISL9N306AS3ST Fairchild Semiconductor electronic component

ISL9N306AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

33,931
RFQ

Datasheet

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 6mOhm @ 75A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
FDG330P onsemi electronic component

FDG330P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi

30,040
RFQ

Datasheet

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
IRFW644BTM Fairchild Semiconductor electronic component

IRFW644BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

19,077
RFQ

Datasheet

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 7A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
G3404B Goford Semiconductor electronic component

G3404B

N30V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor

14,935
RFQ

Datasheet

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Tc) 4.5V, 10V 22mOhm @ 4.2A, 10V 2V @ 250µA 2.5 nC @ 10 V ±20V 568 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
SSM3K56CT,L3F Toshiba Semiconductor and Storage electronic component

SSM3K56CT,L3F

MOSFET N-CH 20V 800MA CST3

Toshiba Semiconductor and Storage

14,906
RFQ

Datasheet

U-MOSVII-H SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 500mW (Ta) 150°C (TA) - - Surface Mount CST3
FSS172-TL-E onsemi electronic component

FSS172-TL-E

PCH 4V DRIVE SERIES

onsemi

13,000
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
G29 Goford Semiconductor electronic component

G29

P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4

Goford Semiconductor

12,694
RFQ

Datasheet

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15 V 4.1A (Tc) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 900mV @ 250µA 7.8 nC @ 10 V ±12V 740 pF @ 10 V - 1.05W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
IRFD9110 Harris Corporation electronic component

IRFD9110

0.7A 100V 1.200 OHM P-CHANNEL

Harris Corporation

11,617
RFQ

Datasheet

- 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-DIP, Hexdip, HVMDIP
SSP2N60A Fairchild Semiconductor electronic component

SSP2N60A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9,000
RFQ

Datasheet

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 410 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G2305 Goford Semiconductor electronic component

G2305

P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7

Goford Semiconductor

8,918
RFQ

Datasheet

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 4.5V 35mOhm @ 4.1A, 4.5V 1V @ 250µA 12 nC @ 4.5 V ±12V 1050 pF @ 10 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G2304 Goford Semiconductor electronic component

G2304

MOSFET N-CH 30V 3.6A SOT-23

Goford Semiconductor

8,870
RFQ

Datasheet

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Tc) 4.5V, 10V 39mOhm @ 1.8A, 10V 2.2V @ 250µA 5 nC @ 10 V ±20V 294 pF @ 15 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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FETs, MOSFETs Electronic Components

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