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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQE004NE1LM7CGATMA1 Infineon Technologies electronic component

IQE004NE1LM7CGATMA1

TRENCH <= 40V

Infineon Technologies

9,900
RFQ

Datasheet

OptiMOS™ 7 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TTFN-9-3
ISC078N12NM6ATMA1 Infineon Technologies electronic component

ISC078N12NM6ATMA1

TRENCH >=100V

Infineon Technologies

4,885
RFQ

Datasheet

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 13.2A (Ta), 85A (Tc) 8V, 10V 7.8mOhm @ 37A, 10V 3.6V @ 49.6µA 26 nC @ 10 V ±20V 2000 pF @ 60 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SuperSO8
IQE004NE1LM7ATMA1 Infineon Technologies electronic component

IQE004NE1LM7ATMA1

TRENCH <= 40V

Infineon Technologies

4,360
RFQ

Datasheet

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-5
NTMYS2D1N04CLTWG onsemi electronic component

NTMYS2D1N04CLTWG

MOSFET N-CH 40V 258A

onsemi

3,000
RFQ

Datasheet

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - 29A (Ta), 132A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
PJQ5540V-AU_R2_002A1 Panjit International Inc. electronic component

PJQ5540V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,730
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29.7A (Ta), 174A (Tc) 7V, 10V 2.1mOhm @ 20A, 10V 3.5V @ 50µA 63 nC @ 10 V ±20V 4690 pF @ 25 V - 3.3W (Ta), 115.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060X-8L
DMTH10H003SPSW-13 Diodes Incorporated electronic component

DMTH10H003SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,150
RFQ

Datasheet

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5542 pF @ 50 V - 2.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type Q)
BUK766R0-60E,118 Nexperia USA Inc. electronic component

BUK766R0-60E,118

MOSFET N-CH 60V 75A D2PAK

Nexperia USA Inc.

1,534
RFQ

Datasheet

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
CDMSJ22010-650 SL Central Semiconductor Corp electronic component

CDMSJ22010-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500
RFQ

Datasheet

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V 30V 726 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIJ4819DP-T1-GE3 Vishay Siliconix electronic component

SIJ4819DP-T1-GE3

P-CHANNEL 80-V (D-S) MOSFET POWE

Vishay Siliconix

5,996
RFQ

Datasheet

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 11.5A (Ta), 44.4A (Tc) 4.5V, 10V 20.7mOhm @ 10A, 10V 2.6V @ 250µA 65 nC @ 10 V ±20V 3420 pF @ 40 V - 5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PJQ5592-AU_R2_002A1 Panjit International Inc. electronic component

PJQ5592-AU_R2_002A1

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000
RFQ

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
R6010YNXC7G Rohm Semiconductor electronic component

R6010YNXC7G

600V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor

983
RFQ

Datasheet

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 47W (Tc) 150°C (TJ) - - Through Hole TO-220FM
R6027YNX3C16 Rohm Semiconductor electronic component

R6027YNX3C16

NCH 600V 27A, TO-220AB, POWER MO

Rohm Semiconductor

980
RFQ

Datasheet

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-220AB
TSM60NC196CI C0G Taiwan Semiconductor Corporation electronic component

TSM60NC196CI C0G

600V, 20A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,840
RFQ

Datasheet

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
IRFSL5615PBF Infineon Technologies electronic component

IRFSL5615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies

964
RFQ

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IQE220N15NM5CGATMA1 Infineon Technologies electronic component

IQE220N15NM5CGATMA1

TRENCH >=100V

Infineon Technologies

4,970
RFQ

Datasheet

OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18.3 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
IQE220N15NM5ATMA1 Infineon Technologies electronic component

IQE220N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

5,000
RFQ

Datasheet

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 44A (Tc) 8V, 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
XPJ1R004PB,LXHQ Toshiba Semiconductor and Storage electronic component

XPJ1R004PB,LXHQ

40V; UMOS9; MOSFET 1MOHM; L-TOGL

Toshiba Semiconductor and Storage

2,975
RFQ

Datasheet

- 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1mOhm @ 80A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 223W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
XP10N3R8IT YAGEO XSEMI electronic component

XP10N3R8IT

FET N-CH 100V 67.7A TO220CFM

YAGEO XSEMI

1,000
RFQ

Datasheet

XP10N3R8 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 67.7A (Ta) 10V 3.88mOhm @ 35A, 10V 4V @ 250µA 131 nC @ 10 V ±20V 6560 pF @ 80 V - 1.92W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
SIHP14N60E-BE3 Vishay Siliconix electronic component

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix

972
RFQ

Datasheet

E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
TPW2R508NH,L1Q Toshiba Semiconductor and Storage electronic component

TPW2R508NH,L1Q

PB-F POWER MOSFET TRANSISTOR DOS

Toshiba Semiconductor and Storage

10,902
RFQ

Datasheet

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 150A (Ta) 10V 2.5mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6000 pF @ 37.5 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
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FETs, MOSFETs Electronic Components

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