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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSS138-7-F-79 Diodes Incorporated electronic component

BSS138-7-F-79

DIODE

Diodes Incorporated

4,808
RFQ

-

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
BSS138W-7-F-79 Diodes Incorporated electronic component

BSS138W-7-F-79

DIODE

Diodes Incorporated

9,596
RFQ

-

- SC-70, SOT-323 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
2N7002T-7-F-79 Diodes Incorporated electronic component

2N7002T-7-F-79

DIODE

Diodes Incorporated

7,557
RFQ

-

- SOT-523 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
DMN2025U Diodes Incorporated electronic component

DMN2025U

DIODE

Diodes Incorporated

6,995
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 1.8V, 4.5V 27mOhm @ 6.5A, 4.5V 900mV @ 250µA 5.9 nC @ 4.5 V ±12V 485 pF @ 10 V - 800mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
2N7002-13-F Diodes Incorporated electronic component

2N7002-13-F

DIODE

Diodes Incorporated

2,306
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA 0.23 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
DMP2004TK Diodes Incorporated electronic component

DMP2004TK

DIODE

Diodes Incorporated

4,546
RFQ

Datasheet

- SOT-523 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 430mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.97 nC @ 8 V ±8V 47 pF @ 16 V - 230mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
MSC025SMA330B4 Microchip Technology electronic component

MSC025SMA330B4

MOSFET SIC 3300 V 25 MOHM TO-247

Microchip Technology

5,810
RFQ

-

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A (Tc) 20V 31mOhm @ 40A, 20V 2.7V @ 7mA 410 nC @ 20 V +23V, -10V 8720 pF @ 2640 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
IPB042N10NF2SATMA1 Infineon Technologies electronic component

IPB042N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

5,414
RFQ

-

* - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
CMS03N06T-HF Comchip Technology electronic component

CMS03N06T-HF

MOSFET N-CH 60V 3A SOT23-3

Comchip Technology

7,640
RFQ

Datasheet

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 105mOhm @ 3A, 10V 2V @ 250µA 14.6 nC @ 10 V ±20V 510 pF @ 30 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
CMS09N10D-HF Comchip Technology electronic component

CMS09N10D-HF

MOSFET N-CH 100V 9.6A DPAK

Comchip Technology

3,960
RFQ

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.6A (Tc) 10V 140mOhm @ 6A, 10V 2.5V @ 250µA 15.5 nC @ 10 V ±20V 690 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
CMS12P03Q8-HF Comchip Technology electronic component

CMS12P03Q8-HF

MOSFET P-CH 30V 12A 8SOP

Comchip Technology

2,880
RFQ

Datasheet

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.2V @ 250µA 44.4 nC @ 10 V ±20V 2419 pF @ 15 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
AUIRFU8403-701TRL Infineon Technologies electronic component

AUIRFU8403-701TRL

MOSFET

Infineon Technologies

8,521
RFQ

-

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 76A, 10V 3.9V @ 100µA 99 nC @ 10 V ±20V 3171 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-21
P3M173K0T3 PN Junction Semiconductor electronic component

P3M173K0T3

SICFET N-CH 1700V 4A TO-220-3

PN Junction Semiconductor

7,965
RFQ

Datasheet

P3M TO-220-2 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 2.6Ohm @ 600mA, 15V 2.2V @ 600µA (Typ) - +19V, -8V - - 75W -55°C ~ 175°C (TJ) - - Through Hole TO-220-2L
P3M12025K4 PN Junction Semiconductor electronic component

P3M12025K4

SICFET N-CH 1200V 112A TO-247-4

PN Junction Semiconductor

4,264
RFQ

Datasheet

P3M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 112A 15V 35mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 577W -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
P3M171K0K3 PN Junction Semiconductor electronic component

P3M171K0K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor

3,426
RFQ

Datasheet

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12080K3 PN Junction Semiconductor electronic component

P3M12080K3

SICFET N-CH 1200V 47A TO-247-3

PN Junction Semiconductor

2,339
RFQ

Datasheet

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M06040K3 PN Junction Semiconductor electronic component

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor

7,418
RFQ

Datasheet

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12160K3 PN Junction Semiconductor electronic component

P3M12160K3

SICFET N-CH 1200V 19A TO-247-3

PN Junction Semiconductor

4,073
RFQ

Datasheet

P3M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
P3M12080K4 PN Junction Semiconductor electronic component

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

PN Junction Semiconductor

4,112
RFQ

Datasheet

P3M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
P3M06060T3 PN Junction Semiconductor electronic component

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor

6,339
RFQ

Datasheet

P3M TO-220-2 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 46A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 170W -55°C ~ 175°C (TJ) - - Through Hole TO-220-2L

FETs, MOSFETs Electronic Components

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