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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK4A60DB(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage

5,265
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A65DA(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK4A65DA(STA4,Q,M)

MOSFET N-CH 650V 3.5A TO220SIS

Toshiba Semiconductor and Storage

6,924
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3.5A (Ta) 10V 1.9Ohm @ 1.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4P50D(T6RSS-Q) Toshiba Semiconductor and Storage electronic component

TK4P50D(T6RSS-Q)

MOSFET N-CH 500V 4A DPAK

Toshiba Semiconductor and Storage

8,825
RFQ

Datasheet

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55DA(T6RSS-Q) Toshiba Semiconductor and Storage electronic component

TK4P55DA(T6RSS-Q)

MOSFET N-CH 550V 3.5A DPAK

Toshiba Semiconductor and Storage

5,355
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P55D(T6RSS-Q) Toshiba Semiconductor and Storage electronic component

TK4P55D(T6RSS-Q)

MOSFET N-CH 550V 4A DPAK

Toshiba Semiconductor and Storage

6,302
RFQ

Datasheet

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P60DA(T6RSS-Q) Toshiba Semiconductor and Storage electronic component

TK4P60DA(T6RSS-Q)

MOSFET N-CH 600V 3.5A DPAK

Toshiba Semiconductor and Storage

5,443
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4P60DB(T6RSS-Q) Toshiba Semiconductor and Storage electronic component

TK4P60DB(T6RSS-Q)

MOSFET N-CH 600V 3.7A DPAK

Toshiba Semiconductor and Storage

6,312
RFQ

-

π-MOSVII TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK50E06K3A,S1X(S Toshiba Semiconductor and Storage electronic component

TK50E06K3A,S1X(S

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

5,229
RFQ

Datasheet

U-MOSIV TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 8.5mOhm @ 25A, 10V - 54 nC @ 10 V - - - - - - - Through Hole TO-220-3
TK50E06K3(S1SS-Q) Toshiba Semiconductor and Storage electronic component

TK50E06K3(S1SS-Q)

MOSFET N-CH 60V 50A TO220-3

Toshiba Semiconductor and Storage

5,209
RFQ

-

U-MOSIV TO-220-3 Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
TK50E08K3,S1X(S Toshiba Semiconductor and Storage electronic component

TK50E08K3,S1X(S

MOSFET N-CH 75V 50A TO220-3

Toshiba Semiconductor and Storage

8,361
RFQ

Datasheet

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 50A (Tc) - 12mOhm @ 25A, 10V - 55 nC @ 10 V - - - - - - - Through Hole TO-220-3
TK50E10K3(S1SS-Q) Toshiba Semiconductor and Storage electronic component

TK50E10K3(S1SS-Q)

MOSFET N-CH 100V 50A TO-220AB

Toshiba Semiconductor and Storage

8,179
RFQ

-

- - Tube Obsolete - - - - - - - - - - - - - - - Through Hole TO-220-3
TK60E08K3,S1X(S Toshiba Semiconductor and Storage electronic component

TK60E08K3,S1X(S

MOSFET N-CH 75V 60A TO220-3

Toshiba Semiconductor and Storage

5,814
RFQ

-

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A - 9mOhm @ 30A, 10V - 75 nC @ 10 V - - - 128W - - - Through Hole TO-220-3
TK60P03M1,RQ(S Toshiba Semiconductor and Storage electronic component

TK60P03M1,RQ(S

MOSFET N-CH 30V 60A DPAK

Toshiba Semiconductor and Storage

2,530
RFQ

-

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 6.4mOhm @ 30A, 10V 2.3V @ 500µA 40 nC @ 10 V ±20V 2700 pF @ 10 V - 63W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK65S04K3L(T6L1,NQ Toshiba Semiconductor and Storage electronic component

TK65S04K3L(T6L1,NQ

MOSFET N-CH 40V 65A DPAK

Toshiba Semiconductor and Storage

9,208
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 6V, 10V 4.5mOhm @ 32.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2800 pF @ 10 V - 88W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage electronic component

TK80S04K3L(T6L1,NQ

MOSFET N-CH 40V 80A DPAK

Toshiba Semiconductor and Storage

4,452
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 6V, 10V 3.1mOhm @ 40A, 10V 3V @ 1mA 87 nC @ 10 V ±20V 4340 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage electronic component

TK80S06K3L(T6L1,NQ

MOSFET N-CH 60V 80A DPAK

Toshiba Semiconductor and Storage

8,637
RFQ

-

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 5.5mOhm @ 40A, 10V 3V @ 1mA 85 nC @ 10 V ±20V 4200 pF @ 10 V - 100W (Tc) 175°C (TJ) - - Surface Mount DPAK+
TK8A60DA(STA4,Q,M) Toshiba Semiconductor and Storage electronic component

TK8A60DA(STA4,Q,M)

MOSFET N-CH 600V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3,828
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 4A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPC6008-H(TE85L,FM Toshiba Semiconductor and Storage electronic component

TPC6008-H(TE85L,FM

MOSFET N-CH 30V 5.9A VS-6

Toshiba Semiconductor and Storage

7,232
RFQ

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.3V @ 100µA 4.8 nC @ 10 V ±20V 300 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6009-H(TE85L,FM Toshiba Semiconductor and Storage electronic component

TPC6009-H(TE85L,FM

MOSFET N-CH 40V 5.3A VS-6

Toshiba Semiconductor and Storage

6,673
RFQ

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 81mOhm @ 2.7A, 10V 2.3V @ 100µA 4.7 nC @ 10 V ±20V 290 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
TPC6010-H(TE85L,FM Toshiba Semiconductor and Storage electronic component

TPC6010-H(TE85L,FM

MOSFET N-CH 60V 6.1A VS-6

Toshiba Semiconductor and Storage

9,673
RFQ

Datasheet

U-MOSVI-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta) 4.5V, 10V 59mOhm @ 3.1A, 10V 2.3V @ 100µA 12 nC @ 10 V ±20V 830 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)

FETs, MOSFETs Electronic Components

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