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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF840PBF Infineon Technologies electronic component

IRF840PBF

MOSFET N-CH 500V 8A TO220AB

Infineon Technologies

8,489
RFQ

-

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFB4710PBF Infineon Technologies electronic component

IRFB4710PBF

MOSFET N-CH 100V 75A TO220AB

Infineon Technologies

9,800
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFP460PBF Infineon Technologies electronic component

IRFP460PBF

MOSFET N-CH 500V 20A TO247AC

Infineon Technologies

5,534
RFQ

-

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFR6215PBF Infineon Technologies electronic component

IRFR6215PBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies

4,272
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFB11N50APBF Infineon Technologies electronic component

IRFB11N50APBF

MOSFET N-CH 500V 11A TO220AB

Infineon Technologies

2,758
RFQ

-

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFR3707PBF Infineon Technologies electronic component

IRFR3707PBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies

6,974
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRF1404SPBF Infineon Technologies electronic component

IRF1404SPBF

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies

8,596
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF3205LPBF Infineon Technologies electronic component

IRF3205LPBF

MOSFET N-CH 55V 110A TO262

Infineon Technologies

4,059
RFQ

Datasheet

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF3704PBF Infineon Technologies electronic component

IRF3704PBF

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies

8,508
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF530NSPBF Infineon Technologies electronic component

IRF530NSPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies

4,363
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF630NSPBF Infineon Technologies electronic component

IRF630NSPBF

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies

2,292
RFQ

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB31N20DPBF Infineon Technologies electronic component

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

Infineon Technologies

4,373
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFB41N15DPBF Infineon Technologies electronic component

IRFB41N15DPBF

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies

4,988
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFR2407PBF Infineon Technologies electronic component

IRFR2407PBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

9,822
RFQ

Datasheet

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRFZ48VPBF Infineon Technologies electronic component

IRFZ48VPBF

MOSFET N-CH 60V 72A TO220AB

Infineon Technologies

8,145
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL2203NPBF Infineon Technologies electronic component

IRL2203NPBF

MOSFET N-CH 30V 116A TO220AB

Infineon Technologies

9,260
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL3303PBF Infineon Technologies electronic component

IRL3303PBF

MOSFET N-CH 30V 38A TO220AB

Infineon Technologies

3,865
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRL530NPBF Infineon Technologies electronic component

IRL530NPBF

MOSFET N-CH 100V 17A TO220AB

Infineon Technologies

5,546
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFP4710PBF Infineon Technologies electronic component

IRFP4710PBF

MOSFET N-CH 100V 72A TO247AC

Infineon Technologies

6,134
RFQ

Datasheet

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 72A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
IRFB59N10DPBF Infineon Technologies electronic component

IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies

4,034
RFQ

Datasheet

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB

FETs, MOSFETs Electronic Components

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