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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APTM20DAM08TG Microchip Technology electronic component

APTM20DAM08TG

MOSFET N-CH 200V 208A SP4

Microchip Technology

7,102
RFQ

Datasheet

- SP4 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 208A (Tc) 10V 10mOhm @ 104A, 10V 5V @ 5mA 280 nC @ 10 V ±30V 14400 pF @ 25 V - 781W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM20SKM08TG Microchip Technology electronic component

APTM20SKM08TG

MOSFET N-CH 200V 208A SP4

Microchip Technology

3,985
RFQ

Datasheet

- SP4 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 208A (Tc) 10V 10mOhm @ 104A, 10V 5V @ 5mA 280 nC @ 10 V ±30V 14400 pF @ 25 V - 781W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM10DAM05TG Microchip Technology electronic component

APTM10DAM05TG

MOSFET N-CH 100V 278A SP4

Microchip Technology

4,620
RFQ

Datasheet

- SP4 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 278A (Tc) 10V 5mOhm @ 125A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 20000 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM10SKM05TG Microchip Technology electronic component

APTM10SKM05TG

MOSFET N-CH 100V 278A SP4

Microchip Technology

9,145
RFQ

Datasheet

- SP4 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 278A (Tc) 10V 5mOhm @ 125A, 10V 4V @ 5mA 700 nC @ 10 V ±30V 20000 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP4
VMO1200-01F IXYS electronic component

VMO1200-01F

MOSFET N-CH 100V 1220A Y3-LI

IXYS

5,864
RFQ

-

HiPerFET™ Y3-Li Box Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1220A (Tc) 10V 1.35mOhm @ 932A, 10V 4V @ 64mA 2520 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) - - Chassis Mount Y3-Li
VM0550-2F IXYS electronic component

VM0550-2F

MOSFET N-CH 100V 590A MODULE

IXYS

7,888
RFQ

-

HiPerFET™ Module Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 590A (Tc) - 2.1mOhm @ 500mA, 10V - 2000 nC @ 10 V - 50000 pF @ 25 V - 2200W - - - Chassis Mount Module
VMO580-02F IXYS electronic component

VMO580-02F

MOSFET N-CH 200V 580A Y3-LI

IXYS

3,845
RFQ

-

HiPerFET™ Y3-Li Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.8mOhm @ 430A, 10V 4V @ 50mA 2750 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) - - Chassis Mount Y3-Li
APTM120DA15G Microsemi Corporation electronic component

APTM120DA15G

MOSFET N-CH 1200V 60A SP6

Microsemi Corporation

9,564
RFQ

Datasheet

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 60A (Tc) 10V 175mOhm @ 30A, 10V 5V @ 10mA 748 nC @ 10 V ±30V 20600 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120SK15G Microsemi Corporation electronic component

APTM120SK15G

MOSFET N-CH 1200V 60A SP6

Microsemi Corporation

2,287
RFQ

Datasheet

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 60A (Tc) 10V 175mOhm @ 30A, 10V 5V @ 10mA 748 nC @ 10 V ±30V 20600 pF @ 25 V - 1250W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
GA100JT12-227 GeneSiC Semiconductor electronic component

GA100JT12-227

TRANS SJT 1200V 160A SOT227

GeneSiC Semiconductor

4,741
RFQ

-

- SOT-227-4, miniBLOC Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 160A (Tc) - 10mOhm @ 100A - - - 14400 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227
VMO1600-02P IXYS electronic component

VMO1600-02P

MOSFET N-CH 200V 1900A Y3-LI

IXYS

6,845
RFQ

Datasheet

PolarHT™ Y3-Li Tray Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1900A (Tc) 10V 1.7mOhm @ 1600A, 10V 5V @ 5mA 2900 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) - - Chassis Mount Y3-Li
2N6660JTVP02 Vishay Siliconix electronic component

2N6660JTVP02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

2,002
RFQ

Datasheet

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
GA50JT17-247 GeneSiC Semiconductor electronic component

GA50JT17-247

TRANS SJT 1700V 100A TO247

GeneSiC Semiconductor

3,478
RFQ

Datasheet

- TO-247-3 Tube Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 100A (Tc) - 25mOhm @ 50A - - - - - 583W (Tc) 175°C (TJ) - - Through Hole TO-247
APTC60DAM18CTG Microchip Technology electronic component

APTC60DAM18CTG

MOSFET N-CH 600V 143A SP4

Microchip Technology

9,381
RFQ

Datasheet

CoolMOS™ SP4 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 143A (Tc) 10V 18mOhm @ 71.5A, 10V 3.9V @ 4mA 1036 nC @ 10 V ±30V 28000 pF @ 25 V - 833W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP4
APTM120UM95FAG Microsemi Corporation electronic component

APTM120UM95FAG

MOSFET N-CH 1200V 103A SP6

Microsemi Corporation

2,474
RFQ

Datasheet

- SP6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 103A (Tc) 10V 114mOhm @ 51.5A, 10V 5V @ 15mA 1122 nC @ 10 V ±30V 30900 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6
2N7636-GA GeneSiC Semiconductor electronic component

2N7636-GA

TRANS SJT 650V 4A TO276

GeneSiC Semiconductor

6,228
RFQ

-

- TO-276AA Bulk Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 4A (Tc) (165°C) - 415mOhm @ 4A - - - 324 pF @ 35 V - 125W (Tc) -55°C ~ 225°C (TJ) - - Surface Mount TO-276
DDB2U80N12W3RFC39BPSA1 Infineon Technologies electronic component

DDB2U80N12W3RFC39BPSA1

EASY STANDARD PLUS

Infineon Technologies

5,718
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
2N7635-GA GeneSiC Semiconductor electronic component

2N7635-GA

TRANS SJT 650V 4A TO257

GeneSiC Semiconductor

7,908
RFQ

-

- TO-257-3 Bulk Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 4A (Tc) (165°C) - 415mOhm @ 4A - - - 324 pF @ 35 V - 47W (Tc) -55°C ~ 225°C (TJ) - - Through Hole TO-257
2N6660JTXP02 Vishay Siliconix electronic component

2N6660JTXP02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

4,383
RFQ

Datasheet

- TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
APTM50DAM19G Microchip Technology electronic component

APTM50DAM19G

MOSFET N-CH 500V 163A SP6

Microchip Technology

4,195
RFQ

Datasheet

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 163A (Tc) 10V 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492 nC @ 10 V ±30V 22400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6

FETs, MOSFETs Electronic Components

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