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FETs, MOSFETs

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AUIRFSA8409-7TRL Infineon Technologies electronic component

AUIRFSA8409-7TRL

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies

1,471
RFQ

Datasheet

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
FCA20N60F onsemi electronic component

FCA20N60F

MOSFET N-CH 600V 20A TO3PN

onsemi

409
RFQ

Datasheet

SuperFET™ TO-3P-3, SC-65-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
IXTQ26N50P Littelfuse Inc. electronic component

IXTQ26N50P

MOSFET N-CH 500V 26A TO3P

Littelfuse Inc.

262
RFQ

Datasheet

Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3P
IPP65R060CFD7XKSA1 Infineon Technologies electronic component

IPP65R060CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies

314
RFQ

Datasheet

CoolMOS™ CFD7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP220N25NFDAKSA1 Infineon Technologies electronic component

IPP220N25NFDAKSA1

MOSFET N-CH 250V 61A TO220-3

Infineon Technologies

903
RFQ

Datasheet

OptiMOS™ TO-220-3 Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 250 V 61A (Tc) 10V 22mOhm @ 61A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7076 pF @ 125 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP60R040S7XKSA1 Infineon Technologies electronic component

IPP60R040S7XKSA1

HIGH POWER_NEW PG-TO220-3

Infineon Technologies

274
RFQ

Datasheet

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
NTP095N65S3HF onsemi electronic component

NTP095N65S3HF

MOSFET N-CH 650V 36A TO220-3

onsemi

495
RFQ

Datasheet

SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 2930 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
STW52NK25Z STMicroelectronics electronic component

STW52NK25Z

MOSFET N-CH 250V 52A TO247-3

STMicroelectronics

961
RFQ

Datasheet

SuperMESH™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 52A (Tc) 10V 45mOhm @ 26A, 10V 4.5V @ 150µA 160 nC @ 10 V ±30V 4850 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
FDB082N15A onsemi electronic component

FDB082N15A

MOSFET N-CH 150V 117A D2PAK

onsemi

632
RFQ

Datasheet

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 117A (Tc) 10V 8.2mOhm @ 75A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 6040 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPB017N08N5ATMA1 Infineon Technologies electronic component

IPB017N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies

2,137
RFQ

Datasheet

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
FCP067N65S3 onsemi electronic component

FCP067N65S3

MOSFET N-CH 650V 44A TO220

onsemi

1,489
RFQ

Datasheet

SuperFET® III TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IXTQ26P20P Littelfuse Inc. electronic component

IXTQ26P20P

MOSFET P-CH 200V 26A TO3P

Littelfuse Inc.

365
RFQ

Datasheet

PolarP™ TO-3P-3, SC-65-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-3P
IPW65R050CFD7AXKSA1 Infineon Technologies electronic component

IPW65R050CFD7AXKSA1

MOSFET N-CH 650V 45A TO247-3-41

Infineon Technologies

198
RFQ

Datasheet

CoolMOS™ CFD7A TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
IRFPF50PBF Vishay Siliconix electronic component

IRFPF50PBF

MOSFET N-CH 900V 6.7A TO247-3

Vishay Siliconix

436
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHP052N60EF-GE3 Vishay Siliconix electronic component

SIHP052N60EF-GE3

MOSFET EF SERIES TO-220AB

Vishay Siliconix

934
RFQ

Datasheet

EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 52mOhm @ 23A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 3380 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
FCH067N65S3-F155 onsemi electronic component

FCH067N65S3-F155

MOSFET N-CH 650V 44A TO247

onsemi

1,045
RFQ

Datasheet

SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
IMBG65R107M1HXTMA1 Infineon Technologies electronic component

IMBG65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

810
RFQ

Datasheet

CoolSIC™ M1 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 141mOhm @ 8.9A, 18V 5.7V @ 2.6mA 15 nC @ 18 V +23V, -5V 496 pF @ 400 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPB60R060C7ATMA1 Infineon Technologies electronic component

IPB60R060C7ATMA1

MOSFET N-CH 600V 35A TO263-3

Infineon Technologies

475
RFQ

Datasheet

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK (TO-263)
MSC090SMA070B Microchip Technology electronic component

MSC090SMA070B

SICFET N-CH 700V TO247-3

Microchip Technology

127
RFQ

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V - - - - - - - - - -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
SIHB055N60EF-GE3 Vishay Siliconix electronic component

SIHB055N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

744
RFQ

Datasheet

EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 55mOhm @ 26.5A, 10V 5V @ 250µA 95 nC @ 10 V ±30V 3707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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FETs, MOSFETs Electronic Components

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