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Bridge Rectifiers

Photo Mfr. Part # Availability Quantity Datasheet Series Package/Case Packaging Product Status Diode Type Technology Voltage - Peak Reverse (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GBPC2508W onsemi electronic component

GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

onsemi

78
RFQ

Datasheet

- 4-Square, GBPC-W Bulk Active Single Phase Standard 800 V 25 A 1.1 V @ 1.2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2502W Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC2502W

BRIDGE RECT 1P 200V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

100
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-W Bulk Active Single Phase Standard 200 V 25 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2506W Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

80
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-W Bulk Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 2 mA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2508A Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC2508A

BRIDGE RECT 1P 800V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

75
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 800 V 25 A - 2 mA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
VS-GBPC3502W Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC3502W

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

100
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 200 V 35 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2508W Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

100
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 2 mA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC2512A Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC2512A

BRIDGE RECT 1P 1.2KV 25A GBPC-A

Vishay General Semiconductor - Diodes Division

68
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 1.2 kV 25 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
VS-GBPC3506W Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC3506W

BRIDGE RECT 1P 600V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

44
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-W Tray Active Single Phase Standard 600 V 35 A - 2 mA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
VS-GBPC3508A Vishay General Semiconductor - Diodes Division electronic component

VS-GBPC3508A

BRIDGE RECT 1P 800V 35A GBPC-A

Vishay General Semiconductor - Diodes Division

70
RFQ

Datasheet

VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 800 V 35 A - 2 mA @ 800 V -55°C ~ 150°C (TJ) - - QC Terminal GBPC-A
GBPC2501W onsemi electronic component

GBPC2501W

BRIDGE RECT 1P 100V 25A GBPC-W

onsemi

49
RFQ

Datasheet

- 4-Square, GBPC-W Tray Active Single Phase Standard 100 V 25 A 1.1 V @ 7.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
GBPC2510W onsemi electronic component

GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

onsemi

84
RFQ

Datasheet

- 4-Square, GBPC-W Bulk Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBPC-W
KBPC1010W-G Comchip Technology electronic component

KBPC1010W-G

BRIDGE RECT 1P 1KV 10A KBPC-W

Comchip Technology

96
RFQ

Datasheet

- 4-Square, KBPC-W Bulk Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBPC-W
GBO25-12NO1 IXYS electronic component

GBO25-12NO1

BRIDGE RECT 1P 1.2KV 25A 4-SIP

IXYS

21
RFQ

Datasheet

- 4-SIP, GBO Tube Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1200 V -40°C ~ 150°C (TJ) - - Through Hole 4-SIP
GBO25-16NO1 IXYS electronic component

GBO25-16NO1

BRIDGE RECT 1P 1.6KV 25A 4-SIP

IXYS

17
RFQ

Datasheet

- 4-SIP, GBO Tube Active Single Phase Standard 1.6 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1600 V -40°C ~ 150°C (TJ) - - Through Hole 4-SIP
VS-26MB160A Vishay General Semiconductor - Diodes Division electronic component

VS-26MB160A

BRIDGE RECT 1P 1.6KV 25A D-34

Vishay General Semiconductor - Diodes Division

6
RFQ

Datasheet

- 4-Square, D-34 Bulk Active Single Phase Standard 1.6 kV 25 A - 10 µA @ 1600 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VBO22-12NO8 IXYS electronic component

VBO22-12NO8

BRIDGE RECT 1P 1.2KV 21A FO-B

IXYS

34
RFQ

Datasheet

- 4-Square, FO-B Box Active Single Phase Standard 1.2 kV 21 A 2.2 V @ 150 A 300 µA @ 1200 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
VS-26MB140A Vishay General Semiconductor - Diodes Division electronic component

VS-26MB140A

BRIDGE RECT 1P 1.4KV 25A D-34

Vishay General Semiconductor - Diodes Division

59
RFQ

Datasheet

- 4-Square, D-34 Bulk Active Single Phase Standard 1.4 kV 25 A - 10 µA @ 1400 V -55°C ~ 150°C (TJ) - - QC Terminal D-34
VS-26MT20 Vishay General Semiconductor - Diodes Division electronic component

VS-26MT20

BRIDGE RECT 3PHASE 200V 25A D-63

Vishay General Semiconductor - Diodes Division

13
RFQ

Datasheet

- 5-Square, D-63 Bulk Active Three Phase Standard 200 V 25 A - 100 µA @ 200 V -55°C ~ 150°C (TJ) - - QC Terminal D-63
VBO36-18NO8 IXYS electronic component

VBO36-18NO8

BRIDGE RECT 1P 1.8KV 30A FO-B

IXYS

49
RFQ

Datasheet

- 4-Square, FO-B Box Active Single Phase Standard 1.8 kV 30 A 1.14 V @ 30 A 40 µA @ 1800 V -40°C ~ 150°C (TJ) - - QC Terminal FO-B
VUO68-08NO7 IXYS electronic component

VUO68-08NO7

BRIDGE RECT 3P 800V 68A ECO-PAC1

IXYS

22
RFQ

Datasheet

- ECO-PAC1 Box Active Three Phase Standard 800 V 68 A 1.5 V @ 60 A 40 µA @ 800 V -40°C ~ 150°C (TJ) - - Chassis Mount ECO-PAC1
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Bridge Rectifiers Electronic Components

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